Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition
نویسندگان
چکیده
Silicon nanowires were selectively grown at temperatures below 400 °C by plasma enhanced chemical vapor deposition using silane as the Si source and gold as the catalyst. A detailed growth study is presented using electron microscopy, focused ion beam preparation, and Raman spectroscopy. A radio-frequency plasma significantly increased the growth rate. The Si nanowires show an uncontaminated, crystalline silicon core surrounded by a 2-nm-thick oxide sheath. The as-grown diameters are small enough for the observation of quantum confinement effects. Plasma activation could allow a further decrease in deposition temperature. A growth model for plasma enhanced nanowire growth is discussed. © 2003 American Institute of Physics. @DOI: 10.1063/1.1614432#
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